Author:
Esser Robert,Christou Aris
Abstract
ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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