Dependence of A-Si:H Tfts Performances on Deposition and Process Parameters

Abstract

ABSTRACTAmorphous silicon TFTs have been realized using several plasma-CVD systems which differ in the conception of the reactor: hot or cold walls, and from the frequency used: 400 kHz and 13.56 MHz. Silicon nitride has been used as insulator. Inverted and direct staggered structures with different channel dimensions (0.5 ≤ W/L ≥ 20) are compared. High performance TFTs with mobility from 0.5 to 0.7 cm2V−1s−1 for inverted and from 0.1 to 0.4 cm2V−1s−l for direct staggered TFTs have been optimized by a full study of the insulator semiconductor and source/drain contact properties.