Author:
Allen S. T.,Sheppard S. T.,Pribble W. L.,Sadler R. A.,Alcorn T. S.,Ring Z.,Palmour J. W.
Abstract
ABSTRACTSiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
Publisher
Springer Science and Business Media LLC
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