Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition

Abstract

ABSTRACTPolySi films deposited with and without oxygen doping using rapid thermal chemical vapor deposition (RTCVD) have been investigated. Experimental results show that RTCVD systems can be used to provide high deposition rates ( 900-1000 Å/min at 700 °C) for both oxygen-doped and non-oxygen-doped polySi films. The surface roughness of the RTCVD polySi film is about half that of conventional LPCVD polySi films. The surface roughness and grain size of the RTCVD polySi film can be further reduced using oxygen doping. The catastrophic breakdown strength for capacitors using oxygen-doped polySi electrodes are improved compared with the breakdown strength for capacitors using non-oxygen-doped polySi electrodes. Electrical resistivities of B, P and As doped samples of polySi films with oxygen doping are found to be larger than those of polySi films without oxygen doping. Resistivities of silicides formed on the oxygen-doped polySi samples are approximately the same for those of silicides formed on non-oxygen-doped polySi samples.