Author:
Borisenko Victor E.,Hesketh Peter J.
Reference111 articles.
1. J. F. Gibbons, C. M. Gronet, and K. E. Williams, Limited reaction processing: Silicon epitaxy, Appl. Phys. Lett.
47(7), 721–723 (1985).
2. J. L. Hoyt, Rapid thermal processing-based epitaxy, in Rapid Thermal Processing, edited by R. B. Fair (Academic Press, New York, 1993), pp. 13–44.
3. A. Sherman, Chemical Vapor Deposition for Microelectronics, Principles, Technology, and Applications (Noyes Publication, Park Ridge, NJ. 1987).
4. S. Sivaron, Chemical Vapor Deposition (Van Nostrand-Reinhold, Princeton, NJ, 1995).
5. J. Bloem, Nucleation and growth of silicon by CVD, J. Cryst. Growth
50, 581–604 (1980).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献