Growth and Characterization of Lpe GaAs on GaAs-Coated Si Prepared By Mbe

Abstract

AbstractGaAs has been successfully grown by LPE on partly covered (windowed) GaAs-on-Si substrates prepared by MBE. Almost dislocation-free layers were obtained in narrow stripe windows. The grown layers were characterized by photoluminescence and Hall effect measurement. The photoluminescence polarization indicated that a uniaxial tensile stress along the stripe direction is applied in the mesa stripe LPE layer while it is biaxial in the wide GaAs layer on Si. The stress relaxation in the direction perpendicular to the stripe is discussed.