Author:
Biegelsen O. K.,Ponce F. A.,Krusor B. S.,Tramontana J. C.,Yingling R. D.,Bringans R. D.,Fenner D. B.
Abstract
AbstractThe initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.
Publisher
Springer Science and Business Media LLC
Cited by
14 articles.
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