Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition

Abstract

ABSTRACTThis paper examines near-equilibrium and non-equilibrium film formation processes in the plasma deposition of Si and their effects on network propagation, defect generation and interface quality based on the concept of film formation as a balance between deposition and ‘etching.’ Using non-F reactant gases and conventional PECVD, epitaxial Si growth was achieved at 250°C. By adjusting the extent of ‘etching’, one can selectively obtain amorphous, microcrystalline, polycrystalline, and epitaxial Si using similar process gases and reactors.