PLASMA DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON: THE EFFECT OF HYDROGEN ON THE GROWTH, STRUCTURE AND ELECTRONIC PROPERTIES-Reference-Cited by-同舟云学术

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PLASMA DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON: THE EFFECT OF HYDROGEN ON THE GROWTH, STRUCTURE AND ELECTRONIC PROPERTIES

Published:1989-01 Issue: Volume: Page:123-147
ISSN:
Container-title:Amorphous Silicon and Related Materials
language:
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Author:

Tsai Chuang Chuang¹

Affiliation:

1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

Publisher

WORLD SCIENTIFIC

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition;MRS Proceedings;2007

2. High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition;Applied Physics Letters;2005-05-30

3. Investigation of hydrogen induced phase transition from a-Si:H to μc-Si:H using real time infrared spectroscopy;Materials Science and Engineering: A;2001-05

4. The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma;Journal of Non-Crystalline Solids;2000-05

5. Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon-Based Multijunction Solar Cells;MRS Proceedings;1999

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