Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

Abstract

AbstractMicrocrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.