A phenomenological model of ion-induced crystallization and amorphization-Reference-Cited by-同舟云学术

A phenomenological model of ion-induced crystallization and amorphization

Published:1991-10 Issue:10 Volume:6 Page:2103-2108
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Carter G.,Nobes M.J.

Abstract

A simple phenomenological model is developed to explain, qualitatively, the observed temperature and ion flux dependences of either recrystallization or further amorphous growth of amorphous layers in semiconductors when exposed to ion irradiation. The model includes radiation assisted annealing processes and thermally modified amorphous zone production at the amorphous-crystal interface.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference33 articles.

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2. 19. Sukirno, Zeroual B. , Emberson S. C. , Ahmed H. , and Carter G. , to be published (1991).

3. Ion-beam induced epitaxy of silicon

4. Kinetics of solid phase crystallization in amorphous silicon

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