TEM Study and Hall Measurement of nc-Si Prepared by Controlled Deposition

Abstract

ABSTRACTWe report the results of a study in which we combined growth experiments with measurements of the nc-structure and of electrical transport Samples were prepared by plasma enhanced-CVD using SiF4 and H2 gases. We also added PH3 and H2 as control parameters for structural change. The microscopic structure was directly observed by TEM. Electron transport in nc-Si was investigated by Hall effect measurements performed at temperatures from 100K to 400K. We produced samples in which the Hall mobility was applied from general transport mechanism of poly crystalline silicon. However, from TEM observation, we conclude that dominant factor on electrical transport strongly depends on the sample structure, and nanocrystalline-silicon structure is so varied as to make it difficult to determine the transport mechanism without the observation of the microscopic structure.