Influence of the Grain Boundary Band Offset on Charge Transport Mechanism in Microcrystalline Silicon Analysed by Numerical Simulation

Abstract

ABSTRACTMicrocrystalline silicon is a two-phase material composed of grains of crystalline silicon embedded in an amorphous silicon tissue. The boundary regions between the crystalline grains and the amorphous matrix are treated similarly to a heterojunction interface.The band offset at the grain boundaries causes the appearance of local electric field peaks, variables in intensity and direction. We present results obtained with two dimensional simulations of a μc-Si:H p-i-n junction in short circuit condition. Charge transport mechanism is described by the internal electric configuration assumed by the junction in thermodynamic equilibrium and illuminated with monochromatic radiations. Different configurations of the band offset at the grain boundaries are also considered and related to the transport properties in microcrystalline silicon