Author:
Robertson P. A.,Milne W. I.
Abstract
ABSTRACTHydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.
Publisher
Springer Science and Business Media LLC
Reference9 articles.
1. Photochemical vapor deposition of amorphous silicon through 185 nm excitation of monosilane
2. Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition
3. Photochemical vapor deposition of undoped andn‐type amorphous silicon films produced from disilane
4. 3. Kamisako K. , Aota K. , Nakano T. , Sugiura T. , Komiya K. , Tarui Y. , 1984 Dry Process Symposium.
5. 6. Tarui Y. , Aota K. , Kamisako K. , Suzuki S. , Hiramoto T. , Extended abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 429–432.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献