Hydrogen Density of States and Defects Densities in a-Si:H-Reference-Cited by-同舟云学术

Hydrogen Density of States and Defects Densities in a-Si:H

Published:1996 Issue: Volume:420 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Deane S C,Powell M J,Robertson J

Abstract

AbstractFurther details are given of a unified model of the hydrogen density of states and defect pool of a-Si:H. The model is compared to other defect models and extended to describe a-Si alloys and the creation of valence band tail states during growth.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference22 articles.

1. Defect formation during growth of hydrogenated amorphous silicon

2. Chemical-equilibrium model of optimala-Si:H growth fromSiH4

3. Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate

4. Deposition‐induced defect profiles in amorphous hydrogenated silicon

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