Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate-Reference-Cited by-同舟云学术

Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate

Published:1992-05 Issue:5 Volume:65 Page:1025-1040
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Cabarrocas P. Rocai¹,Bouizem Y.²,Theye M. L.²

Affiliation:

1. a Laboratoire de Physique des Interfaces et des Couches Minces , Unité Propre de Recherche au CNRS 0258, Ecole Polytechnique , F-91128, Palaiseau , Cedex , France

2. b Laboratoire ďOptique des Solides , Unité de Recherche Associée au CNRS 0781, Université Pierre et Marie Curie , 4 place Jussieu, 75252, Paris , Cedex 05 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819208217918

Reference56 articles.

1. Amer , N. M. and Jackson , W. B. 1984.Semicond. Semimetals, Edited by: Pankove , J. I. Vol. 21, 83London: Academic Press. part B

2. Effect of substrate temperature on deposition rate of rf plasma‐deposited hydrogenated amorphous silicon thin films

3. Substrate temperature dependence of SiH concentration in silane plasmas for amorphous silicon film deposition

4. Structure and Electronic States in Disordered Systems

5. Transition between different regimes of rf glow discharges

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