Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth-Reference-Cited by-同舟云学术

Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth

Published:1999 Issue: Volume:569 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Mueller A.H.,Gao Y.,Irene E.A.,Auciello O.,Krauss A.R.,Schultz J.A.

Abstract

ABSTRACTIn-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa2Cu3O7−δand BaSrTiO3 films.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. 6 Ionwerks, Inc., Houston, Texas 77005

2. A study of oxygen diffusion in and out of YBa2Cu3O7−δ thin films

3. Studies of thin‐film growth, adsorption, and oxidation by in situ, real‐time, and ex situ ion beam analysis

4. Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy

5. Optical properties of high-T/sub c/ superconductors

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5. Real-time study of oxygen in c-axis oriented YBa2Cu3O7−δ thin films using in situ spectroscopic ellipsometry;Journal of Applied Physics;1999-12-15