Development of Materials Integration Strategies for Electroceramic Film-Based Devices Via Complementary In Situ and Ex Situ Studies of Film Growth and Interface Processes-Reference-Cited by-同舟云学术

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Development of Materials Integration Strategies for Electroceramic Film-Based Devices Via Complementary In Situ and Ex Situ Studies of Film Growth and Interface Processes

Published:2002-01 Issue:1 Volume:46 Page:295-306
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Auciello O.¹,Dhote A. M.²,Ramesh R.²,Liu B. T.²,Aggarwal S.²,Mueller A. H.³,Suvarova N. A.³,Irene E. A.³

Affiliation:

1. a Materials Science and Chemistry Divisions , Argonne National Laboratory , Argonne , IL , 60439

2. b Dept of Materials and Nuclear Engineering , University of Maryland , College Park , MD , 20742

3. c Dept of Chemistry , University of North Carolina , Chapel Hill , NC , 27599

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580215376

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature dielectric relaxation and charged defects in ferroelectric thin films;AIP Advances;2013-04

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