Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping-Reference-Cited by-同舟云学术

Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping

Published:1995 Issue: Volume:402 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tung R. T.,Schrey F.

Abstract

AbstractThe growth of CoSi2 layers on Si(100) by Ti-interlayer mediated epitaxy (TIME) was studied. The use of a thin (1–3nm) Ti cap, the choice of an appropriate interlayer, and the removal of a metastable reaction by-product were found important for the fabrication of uniform CoSi2 layers. High quality, pinhole-free, single crystal [100]-oriented CoSi2 layers were fabricated. Multiply-oriented formation on heavily arsenic doped Si, void formation near oxide edges, and other salicide-related issues are also discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

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