Author:
Viatella J.,Singi R.K.,Thiakur R.P.S.,Sandhu G.,Harkness S.D.
Abstract
ABSTRACTRecrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimner laser (wavelength=248 nm, energy density = 0.1−0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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