Author:
Bachrach R.Z.,Winer K.,Boyce J.B.,Ponce F.A.,Ready S.E.,Johnson R.,Anderson G.B.
Abstract
ABSTRACTUsing a suitably homogenized excimer laser beam, we have shown that the threshold for crystallization of amorphous silicon is well defined and exhibits a square root dependence on the laser energy density above threshold. This sharp threshold behavior can be exploited in a number of ways.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. Noguchi T. , Tajima K. and Morita Y. , Mater. Res. Soc. Symp. Proc., (1989), to be published.
2. Laser Processing of Thin Films and Microstructures
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