Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes-Reference-Cited by-同舟云学术

Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes

Published:2001 Issue: Volume:680 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Mishori B.,Muñoz Martin,Mourokh L.,Pollak Fred H.,DeBray J.P.,Ting S.,Ferguson I.

Abstract

ABSTRACTInGaN/GaN/AlGaN multiple quantum well light emitting diodes (MWQ LED's) with different levels of p-doping in the contact layer have been characterized using surface photovoltage spectroscopy (SPS). Due to the high sensitivity of the SPS technique to the electric field, there is a strong correlation between the p-doping level in the contact layer and the magnitude of the SPS signal originating from the MQW region. The experimental results are confirmed by a numerical simulation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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