Modeling of energy structure p-i-n transition on the basis of GaN

Abstract

The differential equation of the second order including function of distribution of density of a mobile charge in the compensated layer p-i-n of transition of the diode on the basis of GaN is received. The decision of the equation is executed by a numerical method with application of program MathCad. The electric field on border of the compensated layer (CL) and the compensated layer pays off from a condition, that concentration made diffusion in CL of electrons is much more than concentration of the motionless compensated ions of an impurity. Electrons from strongly alloyed layer made diffusion in CL, leaving in it positively charged ions donor impurity. Between layers mobile of electrons and ions the electric field E which a drift stream counterbalances diffusion a stream is created. The charged layers of mobile carriers of a charge shield an external electric field.By results of the decision of the differential equation diagrams of distribution of an electric field and potential in the field of a spatial charge p-i-n transition on the basis of GaN in view of influence of free carriers of a charge are constructed. It is shown, that on a site volt ampere to dependence when it is broken it exponential dependence, in the compensated layer the drift field limiting growth of a direct current is created.