High brightness GaN LEDs degradation during dc and pulsed stress

Author:

Meneghini M.,Podda S.,Morelli A.,Pintus R.,Trevisanello L.,Meneghesso G.,Vanzi M.,Zanoni E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

2. Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBTs

3. Levada S, Meneghini M, Zanoni E, Buso S, Spiazzi G, Meneghesso G. IEEE Proc. IRPS 2006, 2006. p. 615–6.

4. Configurations, energies, and thermodynamics of the neutral MgH complex in GaN

5. Meneghini M, Trevisanello L-R, Levada S, Meneghesso G, Tamiazzo G, Zanoni E. et al. IEEE IEDM Tech Dig 2005. 2005. 1009-12.

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