Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method-Reference-Cited by-同舟云学术

Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

Published:2004-09-20 Issue:12 Volume:85 Page:2163-2165
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xi Y.,Schubert E. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1795351

Reference10 articles.

1. Temperature distribution along the striped active region in high‐power GaAlAs visible lasers

2. Temperature rise and thermal rise‐time measurements of a semiconductor laser diode

3. Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8‐beam laser diode array

4. P. W. Epperlein, Proceedings of 17th International Symposium of Gallium Arsenide and Related Compounds, IOP Conference Series (IOP, London, 1990), Vol. 112, p. 633.

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