Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

Abstract

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.