Defects in SiO2/Si Structures Formed by Dry Thermal Oxidation of RF Hydrogen Plasma Cleaned Si
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/15/i=1/a=012037/pdf
Reference8 articles.
1. Third-derivative modulation spectroscopy with low-field electroreflectance
2. AFM surface imaging of thermally oxidized hydrogenated crystalline silicon
3. Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments
4. Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study
5. Thermally induced interface degradation in (100) and (111) Si/SiO[sub 2] analyzed by electron spin resonance
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1. Fabrication, Characterization and Analysis of Concentrically Strained Silicon Nanowires With Extremely-High Hole Mobility;IEEE Journal of Quantum Electronics;2020-12
2. Understanding the effect of confinement in scanning spreading resistance microscopy measurements;Journal of Applied Physics;2020-07-21
3. Interface characterization of nanoscale SiOxlayers grown on RF plasma hydrogenated silicon;Journal of Physics: Conference Series;2016-03
4. Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime;Journal of Applied Physics;2015-10-07
5. Electrical parameters of thin nanoscale SiOxlayers grown on plasma hydrogenated silicon;Journal of Physics: Conference Series;2014-12-03
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