Electrical parameters of thin nanoscale SiOxlayers grown on plasma hydrogenated silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/558/i=1/a=012054/pdf
Reference12 articles.
1. Defects in SiO2/Si Structures Formed by Dry Thermal Oxidation of RF Hydrogen Plasma Cleaned Si
2. Mechanical stress in silicon oxides grown on hydrogen implanted Si
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