Author:
Kitabatake Makoto,Ohoka Atsushi
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique
2. Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films
3. Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth
4. Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
5. 15. Uchida M. , Horikawa N. , Tanaka K. , Takahashi K. , Kiyosawa T. , Hayashi M. , Niwayama M. , Kusumoto O. , Adachi K. , Kudou C. , Kitabatake M. , presented at the IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2011, p. 602.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献