Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films-Reference-Cited by-同舟云学术

Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial Films

Published:2014-02 Issue: Volume:778-780 Page:979-984
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kitabatake Makoto¹,Sako Hideki¹,Sasaki Masayuki¹,Yamashita Tamotsu¹,Tamura Kentaro¹,Yamada Keiichi¹,Ishiyama Osamu¹,Senzaki Junji²,Matsuhata Hirohumi²

Affiliation:

1. RandD Partnership for Future Power Electronics Technology (FUPET)

2. NAIST Tsukuba Central 2

Abstract

The Integrated Evaluation Platform for SiC wafers and epitaxial films is established and provide TDDB reliability data such as Qbd. Accumulated numerous Qbd data derived from the platform shows three discrete universal distributions (D1>D2>D3) mainly affected by step bunching. On the fairly flat surface, locally spreading step-bunching area formation is caused by the scratches on the CMP surface. The step-bunching area contains large number of step-bunching lines, which correspond to trapezoid-shape defects, stretching in a low along the scratches. Only the downstream bases of the trapezoid-shape defects degrade the Qbd into D2 from D1 on the flat surface without step bunching.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.979.pdf

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4. M. Sasaki et al., to be presented Tu-P-29 in ICSCRM2013.

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