Affiliation:
1. R&D Partnership for Future Power Electronics Technology
Abstract
It has been widely accepted that wide-band-gap semiconductor SiC can provide low-loss semiconductor switches and diodes for the power electronics applications. The SiC devices enable the low-loss and compact converters and inverters.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. G. Dhanaraj, B. Raghothamachar, M. Dudley, chap. 23, Growth and Characterization of Silicon Carbide Crystals, in Dhanaraj, Byrappa, Prased, Dudley (Eds. ), Handbook of Crystal Growth, Springer, (2010).
2. H. Tsuchida, M. Ito, I. Kamata, and M. Nagano, Phys. Status. Solidi B 246 (2009) 1553-1568.
3. T. Yamashita, et., al., to be presented in ECSCRM2012.
4. J. Sameshima, and et. al., to be presented in ECSCRM2012.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献