Author:
Schietinger C.,Adams B.,Yarling C.
Abstract
AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.
Publisher
Springer Science and Business Media LLC
Reference14 articles.
1. 9. Lee M.C. , “Noncontact Temperature Measurement”, NASA Office of Space Science and Application, April 30,1987 (unpublished).
2. Energy-gap change in silicon n-type inversion layers at low temperature
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