Author:
Moreno Jean-Christophe,Frayssinet Eric,Semond Fabrice,Massies Jean
Abstract
ABSTRACTIn this work, we present a study of epitaxial Aluminium Nitride (AlN) for thin film bulk acoustic wave (BAW) applications. Molecular beam epitaxy (MBE) was used to perform high crystalline quality AlN thin films growth on different silicon substrate preparations. A morphological study was performed by atomic force microscopy (AFM) and scanning electron microscopy (SEM), while structural properties and acoustic wave speed were respectively assessed by X-ray diffraction and acoustic picoseconds.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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