Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2837179
Reference17 articles.
1. Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates
2. Crystallographic characteristics and effective electromechanical coupling coefficients of AlN thin films for FBAR applications
3. Solidly mounted BAW filters for 8 GHz based on AlN thin films
4. Numerical analysis of thin film BAW resonators
5. Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter
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1. A Novel Modified AlN/Sapphire Layered Structure for Spurious-Free Surface Acoustic Wave Resonator with High Coupling Coefficient;2023 IEEE International Ultrasonics Symposium (IUS);2023-09-03
2. Surface acoustic wave temperature sensor based on Pt/AlN/4 H-SiC structure for high-temperature environments;Sensors and Actuators A: Physical;2023-08
3. High quality and low loss surface acoustic wave SAW resonator based on chromium-doped AlN on sapphire;Applied Physics A;2021-03-16
4. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications;Sensors;2020-08-17
5. FEM Modeling of the Temperature Influence on the Performance of SAW Sensors Operating at GigaHertz Frequency Range and at High Temperature Up to 500 °C;Sensors;2020-07-27
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