Optoelectronic Properties of a-Si:H Films Deposited From He-Diluted Silane-Reference-Cited by-同舟云学术

Optoelectronic Properties of a-Si:H Films Deposited From He-Diluted Silane

Published:1993-01-01 Issue: Volume:297 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Swiatkowski C.,Cabarrocas P.Rocai,Kunst M.

Abstract

In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference4 articles.

1. Microwave detected transient photoconductivity measurements during plasma deposition of intrinsic hydrogenated amorphous silicon

2. The Determination of the Quality of a-Si:H Films for Application in Solar Cells

3. Defect density and hydrogen bonding in hydrogenated amorphous silicon as functions of substrate temperature and deposition rate

4. The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

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