An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique-Reference-Cited by-同舟云学术

An Experimental and Theoretical Study of the Impact of the Precursor Pulse Time on the Growth Per Cycle and Crystallinity Quality of TiO2 Thin Films Grown by ALD and PEALD Technique

Published:2020-10-28 Issue: Volume:6 Page:
ISSN:2297-3079
Container-title:Frontiers in Mechanical Engineering
language:
Short-container-title:Front. Mech. Eng.

Author:

Chiappim William,Fraga Mariana Amorim,Maciel Homero Santiago,Pessoa Rodrigo Sávio

Publisher

Frontiers Media SA

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,General Materials Science

Reference56 articles.

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5. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system;Aoki;AIP Adv.,2015

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