Reduction of Leakage Current and Enhancement of Dielectric Properties of Rutile-TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Reduction of Leakage Current and Enhancement of Dielectric Properties of Rutile-TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition

Published:2024-06-27 Issue:6 Volume:34 Page:283-290
ISSN:1225-0562
Container-title:Korean Journal of Materials Research
language:en
Short-container-title:Korean. J. Mater. Res.

Author:

Eun Su Min¹,Hwang Ji Hyeon²,Choi Byung Joon^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea

2. Department of Optometry, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea

Publisher

The Materials Research Society of Korea

Link

https://journal.mrs-k.or.kr/articles/pdf/doi/10.3740/MRSK.2024.34.6.283.pdf

Reference29 articles.

1. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications

2. Structure and Electrical Properties of ZrO2/Al2O3/TiO2 Films Grown Via Atomic Layer Deposition on TiN Electrodes

3. Leakage Current Minimization of TiO₂-Based Metal–Insulator–Metal Capacitors Using High-Work-Function In₂O₃ and V₂O₅ Ultrathin Interlayers

4. Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

5. Titanium dioxide thin films by atomic layer deposition: a review

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