Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance-Reference-Cited by-同舟云学术

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Published:2012-03-08 Issue:12 Volume:5 Page:404-414
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Jevasuwan Wipakorn,Urabe Yuji,Maeda Tatsuro,Miyata Noriyuki,Yasuda Tetsuji,Yamada Hisashi,Hata Masahiko,Taoka Noriyuki,Takenaka Mitsuru,Takagi Shinichi

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/5/3/404/pdf

Reference20 articles.

1. Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces;Hasegawa;Appl. Surf. Sci.,1989

2. Interface states model for III–V oxide interfaces

3. Arsenic-dominated chemistry in the acid cleaning of InGaAs;Sun;Appl. Phys. Lett.,2008

4. High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

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