Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3025852
Reference10 articles.
1. R. Chau, S. Datta, and A. Majumdar, IEEE Compound Semiconductor Integrated Circuit Symposium, Technical Digest, 2005 (unpublished), pp. 17–20.
2. Capping and decapping of InP and InGaAs surfaces
3. Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces
4. Characterization of surface oxides and oxide desorption on InGaAs
5. Arsenic capping and decapping of InyAl1−yAs(100) grown by molecular beam epitaxy
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