Support Vector Machine–Based Model for 2.5–5.2 GHz CMOS Power Amplifier

Author:

Zhou ShaohuaORCID,Yang Cheng,Wang JianORCID

Abstract

A power amplifier (PA) is the core module of the wireless communication system. The change of its specification directly affects the system’s performance and may even lead to system failure. Furthermore, change in the PA specification is closely related to changes in temperature. To study the influence of PA specification change on the system, we used a support vector machine (SVM) to model the temperature characteristics of PA. For SVM modeling, the question of how much experimental data should be used for modeling to meet the requirements is a constant problem. To address this issue, we investigate the effect of different amounts of training data on the modeling of SVM models. The results show that only 75% of the experimental data needs to be used in the modeling process to satisfy the modeling requirements of the SVM model. The number of measurement points required in the PA specification degradation experiment can be reduced by 25%. The results of this paper serve as a guide for planning the number of experimental measurement points and reducing the measurement cost and measurement time.

Funder

State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Temperature Characteristics Modeling for GaN PA Based on PSO-ELM;Micromachines;2024-08-05

2. Transistor modeling based on LM‐BPNN and CG‐BPNN for the GaAs pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

3. Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers;Micromachines;2024-02-06

4. PSO‐GA‐SVR model for S‐parameters of radio‐frequency power amplifier under different temperatures;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14

5. Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-08-29

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