Abstract
Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.
Funder
Fundação para a Ciência e a Tecnologia
Horizon 2020 Framework Programme
Deutsche Forschungsgemeinschaft
Subject
General Materials Science,General Chemical Engineering
Cited by
25 articles.
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