Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer-Reference-Cited by-同舟云学术

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Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Published:2015-04 Issue:4 Volume:15 Page:441-445
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Pei Yanli,Mai Biaoren,Zhang Xiaoke,Hu Ruiqin,Li Ya,Chen Zimin,Fan Bingfeng,Liang Jun,Wang Gang

Funder

National Natural Science Foundation of China

Shenzhen Innovation Fund

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference18 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

4. Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

5. Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

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