UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors-Reference-Cited by-同舟云学术

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

Published:2016-11-04 Issue:45 Volume:8 Page:31100-31108
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Carlos Emanuel¹,Branquinho Rita¹,Kiazadeh Asal¹,Barquinha Pedro¹,Martins Rodrigo¹,Fortunato Elvira¹

Affiliation:

1. CENIMAT/I3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP/UNINOVA, 2829-516 Caparica, Portugal

Funder

Fundação para a Ciência e a Tecnologia

Seventh Framework Programme

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b06321

Reference47 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. The 2016 oxide electronic materials and oxide interfaces roadmap

5. High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Eco‐Friendly Approach to Ultra‐Thin Metal Oxides‐ Solution Sheared Aluminum Oxide for Half‐Volt Operation of Organic Field‐Effect Transistors;Advanced Functional Materials;2024-07-02

2. Light Effect on Amorphous Tin Oxide Thin‐Film Transistors;Advanced Photonics Research;2024-01-26

3. Electronic materials for solution-processed TFTs;Materials Research Express;2023-08-01

4. Recent advances of In2O3-based thin-film transistors: A review;Applied Surface Science Advances;2023-08

5. Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics;Applied Physics Letters;2023-04-17