On-Line Multi-Frequency Electrical Resistance Tomography (mfERT) Device for Crystalline Phase Imaging in High-Temperature Molten Oxide

Author:

Sejati Prima AsmaraORCID,Saito Noritaka,Prayitno Yosephus Ardean KurniantoORCID,Tanaka Koji,Darma Panji Nursetia,Arisato Miku,Nakashima Kunihiko,Takei Masahiro

Abstract

An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of platinum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to prevent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f=0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At  f <100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL≥ 10,000 Hz and fH≈ 1,000,000 Hz, thermal noise is significantly compensated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςfL, T = 5.99%, at 1000 °C, and an average error ⟨ςfL⟩ = 9.2%.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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