Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Abstract

This work presents a comprehensive comparison of switchable electromechanical transducers in an AlN/GaN heterostructure toward the goal of reconfigurable RF building blocks in next-generation ad hoc radios. The transducers’ inherent switching was achieved by depleting a 2D electron gas (2DEG) channel, allowing an RF signal launched by interdigital transducers (IDTs) to effectively excite the symmetric (So) Lamb mode of vibration in the piezoelectric membrane. Different configurations for applying DC bias to the channel for electromechanical actuation in the piezoelectric are discussed. Complete suppression of the mechanical mode was achieved with the transducers in the OFF state. Equivalent circuit models were developed to extract parameters from measurements by fitting in both ON and OFF states. This is the first time that an extensive comparative study of the performance of different switchable transducers in their ON/OFF state is presented along with frequency scaling of the resonant mode. The switchable transducer with Ohmic IDTs and a Schottky control gate showed superior performance among the designs under consideration.