GaN-on-SiC Surface Acoustic Wave Devices Up to 14.3 GHz

Author:

Ahmed Imtiaz1,Rawat Udit1,Chen Jr-Tai2,Weinstein Dana1

Affiliation:

1. Purdue University,West Lafayette,Indiana,USA

2. SweGaN AB,Linköping,Sweden

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Actuator/Reflector Decoupling for Reduced Excitation of Secondary Mechanical Resonance Modes in MEMS-Tunable VCSELs;2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS);2024-01-21

2. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor;Science China Information Sciences;2023-10-30

3. Applications of remote epitaxy and van der Waals epitaxy;Nano Convergence;2023-04-30

4. Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2023-04

5. Lithium Niobate Thin Film Based A1 Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%;2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS);2023-01-15

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