Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/2/113/pdf
Reference44 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Recent progress of nitride-based light emitting devices
3. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
4. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
5. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
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