Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits
Author:
Publisher
MDPI AG
Subject
Electrical and Electronic Engineering
Link
http://www.mdpi.com/2079-9268/5/2/101/pdf
Reference16 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect Transistors
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