GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET-Reference-Cited by-同舟云学术

GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET

Published:2022 Issue: Volume:10 Page:130001-130023
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Park Taeeon¹^ORCID,Kwak Jihwan¹,Ahn Hongjoon¹,Lee Jinwoong²,Lim Jaehyuk²^ORCID,Yu Sangho²,Shin Changhwan³^ORCID,Moon Taesup¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea

2. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea

3. School of Electrical Engineering, Korea University, Seoul, South Korea

Funder

Ministry of Trade, Industry and Energy (MOTIE) of Korean Government and the Korea Semiconductor Research Consortium (KSRC) Support Program for the development of the future semiconductor device

Institute for Information and Communication Technology Planning and Evaluation (IITP) grant of Korean Government [Artificial Intelligence Graduate School Program (Seoul National University)]

Artificial Intelligence Innovation Hub

New Faculty Startup Fund from Seoul National University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09982433.pdf?arnumber=9982433

Reference74 articles.

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2. Surface roughness generated by plasma etching processes of silicon

3. The first compact model to determine VT distribution for DG-FinFET due to LER;rawat;IEEE Trans Electron Devices,2018

4. Pytorch: An imperative style, high-performance deep learning library;paszke;Proc Adv Neural Inf Process Syst,2019

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