Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS2 Transistors

Abstract

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS2 RF transistors, the impact of the back-gate bias on dual-gate MoS2 RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS2 high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS2 as channel material, high-performance top-gate transistors with on/off ratio of 107 and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at Vbg = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic fmax of 29.7 GHz was achieved, which is as high as 2.1 times the fmax without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS2 RF transistors and presents the potential of dual-gate MoS2 RF transistors for future high-frequency applications.